Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with $${N}^{+}{-}{P}^{-}$$ N + - P - junction
Crossref DOI link: https://doi.org/10.1007/s10825-018-1152-6
Published Online: 2018-03-13
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ramezani, Zeinab
Orouji, Ali A. http://orcid.org/0000-0002-8664-6069
Text and Data Mining valid from 2018-03-13
Article History
First Online: 13 March 2018