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Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)

Crossref DOI link: https://doi.org/10.1007/s10825-018-1157-1

Published Online: 2018-03-26

Published Print: 2018-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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