Quantum kinetics approach to calculation of the low field mobility in the hole inversion layers of silicon MOSFET’s
Crossref DOI link: https://doi.org/10.1007/s10825-018-1163-3
Published Online: 2018-04-13
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kovalenko, K. L.
Kozlovskiy, S. I. http://orcid.org/0000-0002-9064-9975
Sharan, N. N.
License valid from 2018-04-13