A dopingless gate-all-around (GAA) gate-stacked nanowire FET with reduced parametric fluctuation effects
Crossref DOI link: https://doi.org/10.1007/s10825-018-1166-0
Published Online: 2018-04-16
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Sarabdeep
Raman, Ashish
Text and Data Mining valid from 2018-04-16
Article History
First Online: 16 April 2018