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Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications

Published Online: 2018-07-30

Published Print: 2018-12

Authors

Beohar, Ankur

Yadav, Nandakishor

Shah, Ambika Prasad

Vishvakarma, Santosh Kumar https://orcid.org/0000-0002-0515-2711
Funding

Funding for this research was provided by:

Council of Scientific and Industrial Research (22/0651/14/EMR-II)
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Article History

First Online: 30 July 2018

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