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Impact of channel length, gate insulator thickness, gate insulator material, and temperature on the performance of nanoscale FETs

Crossref DOI link: https://doi.org/10.1007/s10825-018-1235-4

Published Online: 2018-09-05

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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