Simulation of the influence of the gate dielectric on amorphous indium-gallium-zinc oxide thin-film transistor reliability
Crossref DOI link: https://doi.org/10.1007/s10825-019-01316-4
Published Online: 2019-02-23
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Labed, Mohamed
Sengouga, Nouredine http://orcid.org/0000-0002-4437-0869
Text and Data Mining valid from 2019-02-23
Article History
First Online: 23 February 2019