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Simulation of the influence of the gate dielectric on amorphous indium-gallium-zinc oxide thin-film transistor reliability

Crossref DOI link: https://doi.org/10.1007/s10825-019-01316-4

Published Online: 2019-02-23

Published Print: 2019-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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