A comparative study of a deep-trench superjunction SiC VDMOS device
Crossref DOI link: https://doi.org/10.1007/s10825-019-01318-2
Published Online: 2019-02-25
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hu, Shengdong http://orcid.org/0000-0002-5838-4444
Huang, Ye
Liu, Tao
Guo, Jingwei
Wang, Jian’an
Luo, Jun
Text and Data Mining valid from 2019-02-25
Article History
First Online: 25 February 2019