A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)
Crossref DOI link: https://doi.org/10.1007/s10825-019-01320-8
Published Online: 2019-03-14
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sun, Jing http://orcid.org/0000-0002-7917-071X
Li, Yanping
Cao, Lei
Funding for this research was provided by:
Young Scientists Fund (51502087)
Scientific Research Fund of Hunan Provincial Education Department (15B056)
Text and Data Mining valid from 2019-03-14
Article History
First Online: 14 March 2019