Theoretical study of the effect of polarization matching layers on the Shockley–Read–Hall recombination-induced dark current density in InGaN/GaN heterostructure solar cells
Crossref DOI link: https://doi.org/10.1007/s10825-019-01333-3
Published Online: 2019-04-10
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Saini, Basant
Sharma, Sugandha
Kaur, Ravinder
Pal, Suchandan
Kapoor, Avinashi
Text and Data Mining valid from 2019-04-10
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First Online: 10 April 2019