Electrostatically doped drain junctionless transistor for low-power applications
Crossref DOI link: https://doi.org/10.1007/s10825-019-01335-1
Published Online: 2019-04-16
Published Print: 2019-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Raushan, Mohd Adil http://orcid.org/0000-0002-8490-7501
Alam, Naushad
Siddiqui, Mohd Jawaid
Funding for this research was provided by:
Department of Electronics and Information Technology, Ministry of Communications and Information Technology (PhD-MLA/4(39)/2015-16/ Dated 30.05.2016)
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Article History
First Online: 16 April 2019