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A GaN RB-MISHEMT with a Schottky–MIS hybrid drain and An Al0−0.50Ga1−0.50N/GaN heterojunction

Published Online: 2019-06-08

Published Print: 2019-09

Authors

Shi, Yijun https://orcid.org/0000-0001-8485-1109
Wanjun, Chen

Chen, Tangsheng
Funding

Funding for this research was provided by:

Department of Science and Technology of Sichuan Province (2017JQ0020)

the Fundamental Research Funds for the Central Universities (ZYGX2016Z006)

the Major science and technology special projects in Guangdong (2017B010112003)
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Article History

First Online: 8 June 2019

Document is current