A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges
Crossref DOI link: https://doi.org/10.1007/s10825-019-01377-5
Published Online: 2019-07-25
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Suddapalli, Subba Rao http://orcid.org/0000-0002-3191-0731
Nistala, Bheema Rao
Text and Data Mining valid from 2019-07-25
Version of Record valid from 2019-07-25
Article History
First Online: 25 July 2019