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Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study

Crossref DOI link: https://doi.org/10.1007/s10825-019-01383-7

Published Online: 2019-08-02

Published Print: 2019-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wang, Zeheng https://orcid.org/0000-0002-6994-1234
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Text and Data Mining valid from 2019-08-02

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Article History

First Online: 2 August 2019

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: The author declares that have no conflicts of interest.