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A physics-based model for LER-induced threshold voltage variations in double-gate MOSFET

Crossref DOI link: https://doi.org/10.1007/s10825-020-01474-w

Published Online: 2020-03-06

Published Print: 2020-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sriram, S. R.

Bindu, B. https://orcid.org/0000-0002-9274-6883
Funding

Funding for this research was provided by:

SERB, Department of Science and Technology, India (SERB/F/4194/2017-2018)
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Text and Data Mining valid from 2020-03-06

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Article History

First Online: 6 March 2020