Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect
Crossref DOI link: https://doi.org/10.1007/s10825-020-01484-8
Published Online: 2020-03-31
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Joshi, Tripuresh
Singh, Balraj
Singh, Yashvir
Text and Data Mining valid from 2020-03-31
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Article History
First Online: 31 March 2020