A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET
Crossref DOI link: https://doi.org/10.1007/s10825-020-01497-3
Published Online: 2020-04-22
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Karbalaei, Mohammad
Dideban, Daryoosh
Heidari, Hadi
Text and Data Mining valid from 2020-04-22
Version of Record valid from 2020-04-22
Article History
First Online: 22 April 2020