Document is current

Any future updates will be listed below

A source/drain-on-insulator structure to improve the performance of stacked nanosheet field-effect transistors

Crossref DOI link: https://doi.org/10.1007/s10825-020-01502-9

Published Online: 2020-04-25

Published Print: 2020-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark