A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
Crossref DOI link: https://doi.org/10.1007/s10825-020-01503-8
Published Online: 2020-04-25
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Usha, C.
Vimala, P.
Samuel, T. S. Arun
Pandian, M. Karthigai
Text and Data Mining valid from 2020-04-25
Version of Record valid from 2020-04-25
Article History
First Online: 25 April 2020