Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction
Crossref DOI link: https://doi.org/10.1007/s10825-020-01540-3
Published Online: 2020-06-30
Published Print: 2020-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shaw, Namrata http://orcid.org/0000-0003-0491-4304
Mukhopadhyay, Bratati
Sen, Gopa
Text and Data Mining valid from 2020-06-30
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Article History
First Online: 30 June 2020
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: The authors declare that they have no conflicts of interest.