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Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications

Crossref DOI link: https://doi.org/10.1007/s10825-020-01541-2

Published Online: 2020-07-13

Published Print: 2020-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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