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Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors

Crossref DOI link: https://doi.org/10.1007/s10825-020-01572-9

Published Online: 2020-08-14

Published Print: 2020-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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