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Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier density

Crossref DOI link: https://doi.org/10.1007/s10825-020-01613-3

Published Online: 2021-01-02

Published Print: 2021-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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