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The effect of the stacking arrangement on the device behavior of bilayer MoS2 FETs

Published Online: 2021-01-03

Published Print: 2021-02

Authors

Mukhopadhyay, Arnab https://orcid.org/0000-0001-8248-8529
Kanungo, Sayan

Rahaman, Hafizur
Funding

Funding for this research was provided by:

Department of Science and Technology, Ministry of Science and Technology (DST/INSPIRE/04/2013/000108)

Birla Institute of Technology and Science, Pilani (Outstanding Potential in Research and Academics grant)
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Text and Data Mining valid from 2021-01-03

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Article History

Received: 20 March 2020

Accepted: 7 December 2020

First Online: 3 January 2021

Document is current