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A new design for improving the performance of AlGaN/GaN high-electron-mobility transistors

Published Online: 2021-07-10

Published Print: 2021-10

Authors

Rezaee, Mohammad

Khosroabadi, Saeed https://orcid.org/0000-0002-7474-5107
License Information

Text and Data Mining valid from 2021-07-10

Version of Record valid from 2021-07-10
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Article History

Received: 31 December 2020

Accepted: 17 June 2021

First Online: 10 July 2021

Declarations

:

: The authors declare that they have no conflicts of interest.

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