Design and simulation of gallium nitride trench MOSFETs for applications with high lifetime demand
Crossref DOI link: https://doi.org/10.1007/s10825-021-01736-1
Published Online: 2021-07-02
Published Print: 2021-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dannecker, Kevin https://orcid.org/0000-0001-8042-1398
Baringhaus, Jens
Text and Data Mining valid from 2021-07-02
Version of Record valid from 2021-07-02
Article History
Received: 18 November 2019
Accepted: 30 May 2021
First Online: 2 July 2021