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The design of a graphene nanoribbon field-effect transistor with reduced internal fringe capacitance for application in the gigahertz to terahertz frequency range

Crossref DOI link: https://doi.org/10.1007/s10825-021-01795-4

Published Online: 2021-10-26

Published Print: 2021-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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