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Enhancing the design and performance of a gate-all-around (GAA) charge plasma nanowire field-effect transistor with the help of the negative-capacitance technique

Crossref DOI link: https://doi.org/10.1007/s10825-021-01808-2

Published Online: 2021-11-11

Published Print: 2021-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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