The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications
Crossref DOI link: https://doi.org/10.1007/s10825-021-01816-2
Published Online: 2021-12-02
Published Print: 2022-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Danielraj, A.
Deb, Sanjoy
Mohanbabu, A.
Kumar, R. Saravana
Text and Data Mining valid from 2021-12-02
Version of Record valid from 2021-12-02
Article History
Received: 10 February 2021
Accepted: 26 October 2021
First Online: 2 December 2021
Declarations
:
: The authors declare that they have no conflicts of interest.