Document is current

Any future updates will be listed below

Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle

Crossref DOI link: https://doi.org/10.1007/s10825-021-01819-z

Published Online: 2022-01-03

Published Print: 2022-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark