Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
Crossref DOI link: https://doi.org/10.1007/s10825-021-01837-x
Published Online: 2022-01-28
Published Print: 2022-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Motamedi, Aida
Orouji, Ali A. https://orcid.org/0000-0002-8664-6069
Madadi, Dariush
Text and Data Mining valid from 2022-01-28
Version of Record valid from 2022-01-28
Article History
Received: 6 August 2021
Accepted: 7 December 2021
First Online: 28 January 2022
Declarations
:
: The authors declare that they have no conflict of interest.
: Not applicable.