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An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage

Published Online: 2022-02-02

Published Print: 2022-02

Authors

Gholipour, Farshad

Orouji, Ali A. https://orcid.org/0000-0002-8664-6069
Madadi, Dariush
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Text and Data Mining valid from 2022-02-01

Version of Record valid from 2022-02-01
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Article History

Received: 2 June 2021

Accepted: 13 December 2021

First Online: 2 February 2022

Declarations

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: The authors declare that they have no potential conflicts of interest.

: Not applicable.

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