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Junctionless In0.3Ga0.7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications

Crossref DOI link: https://doi.org/10.1007/s10825-022-01919-4

Published Online: 2022-08-01

Published Print: 2022-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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