A physics-based analytical model for single-event transients in an InGaAs n-channel FinFET suitable for circuit simulations
Crossref DOI link: https://doi.org/10.1007/s10825-022-01954-1
Published Online: 2022-10-17
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Aneesh, Y. M.
Bindu, B. https://orcid.org/0000-0002-9274-6883
Text and Data Mining valid from 2022-10-17
Version of Record valid from 2022-10-17
Article History
Received: 3 May 2021
Accepted: 18 September 2022
First Online: 17 October 2022