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Negative capacitance silicon nanotube FET: a subthreshold modeling exploration of sub-60 mV/decade swing, negative drain-induced barrier lowering, and threshold voltage roll-off

Crossref DOI link: https://doi.org/10.1007/s10825-022-01986-7

Published Online: 2022-12-20

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Moparthi, Sandeep

Tiwari, Pramod Kumar

Saramekala, Gopi Krishna https://orcid.org/0000-0003-0608-843X
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Text and Data Mining valid from 2022-12-20

Version of Record valid from 2022-12-20
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Article History

Received: 24 February 2022

Accepted: 15 November 2022

First Online: 20 December 2022

Declarations

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: The authors have no conflicts of interest to declare that are relevant to the content of this article.

: Not applicable.

: All the authors declare their consent to transfer the publication rights to the journal in which this manuscript is submitted.

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