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Design considerations for engineering $$\hbox {HfS}_2$$ negative capacitance FET through multilayered channel and $$\hbox {Hf}_{1-x}{\hbox {Zr}_{x}}\hbox {O}_2$$/$$\hbox {HfO}_2$$ double-gate stacks: an ab initio and NEGF study

Crossref DOI link: https://doi.org/10.1007/s10825-023-02036-6

Published Online: 2023-05-14

Published Print: 2023-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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