Eyvazi, Kaveh
Yaghoubi, Hamid Reza
Karami, Mohammad Azim
Article History
Received: 22 August 2023
Accepted: 22 May 2024
First Online: 3 June 2024
Declarations
:
: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
: We the undersigned declare that the manuscript entitled “A new stacked gate oxide L-shaped Tunnel Field Effect Transistor’’ is original, has not been full or partly published before, and is not currently being considered for publication elsewhere.
: Not applicable.
: Not applicable.