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Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application

Crossref DOI link: https://doi.org/10.1007/s10825-024-02216-y

Published Online: 2024-08-19

Published Print: 2024-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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