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Shallow donor impurity states in wurtzite InGaN/GaN coupled quantum wells under built-in electric field, hydrostatic pressure, and strain effects

Published Online: 2024-12-18

Published Print: 2025-02

Authors

Wang, Guang-Xin

Duan, Xiu-Zhi
Funding

Funding for this research was provided by:

the Science and Technology Project of the Hebei Education Department Foundation,China (QN2015050)
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Text and Data Mining valid from 2024-12-18

Version of Record valid from 2024-12-18
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Article History

Received: 22 September 2024

Accepted: 12 November 2024

First Online: 18 December 2024

Declarations

:

: The authors declare no competing interests.

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