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Investigation of stability parameters of a gate-stack junctionless double-gate transistor (GS-JLDGT)-based 6T and 3T SRAM in the presence of traps

Crossref DOI link: https://doi.org/10.1007/s10825-025-02285-7

Published Online: 2025-02-25

Published Print: 2025-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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