Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel
Crossref DOI link: https://doi.org/10.1007/s10825-025-02293-7
Published Online: 2025-02-28
Published Print: 2025-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Juhyun
Shin, Hyungcheol
Text and Data Mining valid from 2025-02-28
Version of Record valid from 2025-02-28
Article History
Received: 29 October 2024
Accepted: 5 February 2025
First Online: 28 February 2025
Declarations
:
: The authors declare no competing interests.