Cryogenic sub-THz ultrathin-body InGaAs MOSFET: physical modeling and DC/RF analysis
Crossref DOI link: https://doi.org/10.1007/s10825-025-02324-3
Published Online: 2025-05-30
Published Print: 2025-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sai, S. Bhavesh
Navaneeth, M.
Kannadassan, D.
Text and Data Mining valid from 2025-05-30
Version of Record valid from 2025-05-30
Article History
Received: 12 March 2024
Accepted: 1 April 2025
First Online: 30 May 2025
Declarations
:
: The authors have not disclosed any competing interests.