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Numerical simulation of single-event burnout effects in p-GaN gate HEMTS

Published Online: 2026-01-13

Published Print: 2026-02

Authors

Wang, JinLong

Zhao, JiaRui

Zhang, YanFei

Sun, Kai

Liu, MengXin
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Text and Data Mining valid from 2026-01-13

Version of Record valid from 2026-01-13
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Article History

Received: 15 October 2025

Accepted: 29 December 2025

First Online: 13 January 2026

Declarations

:

: The authors declare no competing interests.

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