Crossmark

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Crossref DOI link: https://doi.org/10.1007/s10836-017-5647-z

Published Online: 2017-02-13

Published Print: 2017-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Mo, Jiongjiong https://orcid.org/0000-0002-5613-7706
Chen, Hua

Wang, Liping

Yu, Faxin
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61604128)

Scientific Research Fund of Zhejiang Provincial Education Department (Y201533913)

Fundamental Research Funds for the Central Universities (2016QNA4025)
License Information

License valid from 2017-02-13