The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C
Crossref DOI link: https://doi.org/10.1007/s10853-015-9475-1
Published Online: 2015-10-13
Published Print: 2016-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Yiheng
Yasuda, Hiroshi
Schiekofer, Manfred
Xia, Guangrui
Funding for this research was provided by:
Semiconductor Research Corporation (US) (2240.001)
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