Crossmark

Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

Crossref DOI link: https://doi.org/10.1007/s10853-017-1765-3

Published Online: 2017-10-31

Published Print: 2018-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhou, Shuxing

Ai, Likun

Qi, Ming

Wang, Shumin

Xu, Anhuai

Guo, Qi
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (Grant No. 11705277)

the West Light Foundation of the Chinese Academy of Sciences (Grant No. 2016-QNXZ-B-10)

National Basic Research Program of China (Grant No. 2014CB643902)
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