Minimizing the charge recombination rate at the FTO/Zn2SnO4 interface by metal oxide semiconductors in DSSCs
Crossref DOI link: https://doi.org/10.1007/s10853-018-2092-z
Published Online: 2018-02-09
Published Print: 2018-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Asemi, Morteza
Ghanaatshoar, Majid
Funding for this research was provided by:
Iran National Science Foundation (95007269)
Text and Data Mining valid from 2018-02-09
Article History
Received: 19 September 2017
Accepted: 31 January 2018
First Online: 9 February 2018