Crossmark

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

Crossref DOI link: https://doi.org/10.1007/s10853-018-2573-0

Published Online: 2018-06-18

Published Print: 2018-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Tong, Jinchao http://orcid.org/0000-0002-8398-9242
Tobing, Landobasa Y. M. http://orcid.org/0000-0002-3113-1252
Qian, Li http://orcid.org/0000-0001-6424-7158
Suo, Fei http://orcid.org/0000-0002-4613-400X
Zhang, Dao Hua http://orcid.org/0000-0002-5853-254X
Funding

Funding for this research was provided by:

Economic Development Board - Singapore (NRF2013SAS-SRP001-019)

Ministry of Education - Singapore (RG177/17)

Agency for Science, Technology and Research, Singapore (1720700038)
License Information

Text and Data Mining valid from 2018-06-18
More Information

Article History

Received: 23 March 2018

Accepted: 8 June 2018

First Online: 18 June 2018

Compliance with ethical standards

:

: The authors declare that they have no conflict of interest.