Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics
Crossref DOI link: https://doi.org/10.1007/s10853-018-2695-4
Published Online: 2018-08-06
Published Print: 2018-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Park, Bo-Eun
Lee, Yujin
Oh, Il-Kwon
Noh, Wontae
Gatineau, Satoko
Kim, Hyungjun http://orcid.org/0000-0001-5393-2053
Text and Data Mining valid from 2018-08-06
Article History
Received: 21 January 2018
Accepted: 10 July 2018
First Online: 6 August 2018