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Oxygen vacancy semiconductor: an additive to improve corrosion protective performance significantly

Crossref DOI link: https://doi.org/10.1007/s10853-018-2737-y

Published Online: 2018-07-30

Published Print: 2018-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Gao, Min

Wang, Jixiao

Zhou, Yu

Quan, Xiaodong

Song, Shuangshuang

Wang, Zhi

Zhao, Song

Wang, Huaiyuan
Funding

Funding for this research was provided by:

Public Science and Technology Research Funds Projects of Ocean (201405013-5)

Program of Introducing Talents of Discipline to Universities (B06006)

National Natural Science Foundation of China (20836006)

National High Technology Research and Development Program (2012AA03A611)

Tianjin Research Program of Basic Research and Frontier Technology (15JCQNJC43400)
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Article History

Received: 18 April 2018

Accepted: 24 July 2018

First Online: 30 July 2018

Compliance with ethical standards

:

: The authors declare that they have no conflict of interest.